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| PD- 91621B IRG4PH40UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode * New IGBT design provides tighter parameter distribution and higher efficiency than previous generations * IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations * Industry standard TO-247AC package C UltraFast CoPack IGBT VCES = 1200V G E VCE(on) typ. = 2.43V @VGE = 15V, IC = 21A n-ch an nel Benefits * Higher switching frequency capability than competitive IGBTs * Highest efficiency available * HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 1200 41 21 82 82 8.0 130 20 160 65 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf*in (1.1N*m) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. --- --- --- --- --- Typ. --- --- 0.24 --- 6 (0.21) Max. 0.77 1.7 --- 40 --- Units C/W g (oz) www.irf.com 1 7/7/2000 IRG4PH40UD Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 1200 -- Temperature Coeff. of Breakdown Voltage -- 0.43 Collector-to-Emitter Saturation Voltage -- 2.43 -- 2.97 -- 2.47 Gate Threshold Voltage 3.0 -- Temperature Coeff. of Threshold Voltage -- -11 Forward Transconductance T 16 24 Zero Gate Voltage Collector Current -- -- -- -- Diode Forward Voltage Drop -- 2.6 -- 2.4 Gate-to-Emitter Leakage Current -- -- Max. Units Conditions -- V VGE = 0V, IC = 250A -- V/C VGE = 0V, IC = 1.0mA 3.1 IC = 21A VGE = 15V -- V IC = 41A See Fig. 2, 5 -- IC = 21A, TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100V, IC = 21A 250 A VGE = 0V, VCE = 600V 5000 VGE = 0V, VCE = 600V, TJ = 150C 3.3 V IC = 8.0A See Fig. 13 3.1 IC = 8.0A, TJ = 125C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di (rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 86 13 29 46 35 97 240 1.80 1.93 3.73 42 32 240 510 7.04 13 1800 120 18 63 106 4.5 6.2 140 335 133 85 Max. Units Conditions 130 IC = 21A 20 nC VCC = 400V See Fig. 8 44 VGE = 15V -- TJ = 25C -- ns IC = 21A, VCC = 800V 150 VGE = 15V, R G = 10 360 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 18 4.6 -- TJ = 150C, See Fig. 11, 18 -- ns IC = 21A, VCC = 800V -- VGE = 15V, R G = 10 -- Energy losses include "tail" and -- mJ diode reverse recovery. -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 95 ns TJ = 25C See Fig. 160 TJ = 125C 14 IF = 8.0A 8.0 A TJ = 25C See Fig. 15 VR = 200V 11 TJ = 125C 380 nC TJ = 25C See Fig. 880 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 2 www.irf.com IRG4PH40UD 25 For both: 20 LOAD CURRENT (A) D uty cy cle: 50% TJ = 125C T s ink = 90C G ate drive as specified P ow e r Dis sip ation = 35 W S q u a re w a v e : 6 0% of rate d volta ge 15 10 I 5 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 10 TJ = 150 o C TJ = 150 o C 10 TJ = 25 o C V = 15V 20s PULSE WIDTH GE 1 10 TJ = 25 o C 1 1 5 6 7 V = 50V 5s PULSE WIDTH CC 8 9 10 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PH40UD 50 4.0 40 VCE , Collector-to-Emitter Voltage(V) V = 15V 80 us PULSE WIDTH GE I C = 42 A Maximum DC Collector Current(A) 3.0 30 I C = 21 A I C =10.5 A 2.0 20 10 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PH40UD 4000 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 3000 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 21A 16 Cies 2000 12 8 1000 C oes C res 4 0 1 10 100 0 0 20 40 60 80 100 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 5.0 Total Switching Losses (mJ) 4.5 Total Switching Losses (mJ) VCC = 800V VGE = 15V TJ = 25 C I C = 21A 100 RG = 10 Ohm VGE = 15V VCC = 800V IC = 42 A 10 4.0 IC = 21 A IC = 10.5 A 3.5 3.0 0 10 20 30 40 50 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RGG,, Gate Resistance( (Ohm) R Gate Resistance ) TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PH40UD 16 12 8 I C , Collector-to-Emitter Current (A) 20 30 40 50 Total Switching Losses (mJ) RG TJ VCC VGE = 10 Ohm = 150 C = 800V = 15V 1000 VGE = 20V T J = 125 oC 100 10 4 0 0 10 SAFE OPERATING AREA 1 1 10 100 1000 10000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Insta ntaneo us F orw ard Cu rrent - I F (A ) 10 TJ = 15 0C TJ = 12 5C TJ = 2 5C 1 0 2 4 6 8 10 Fo rwa rd V oltage D rop - V F M (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PH40UD 200 100 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 160 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C I F = 16A t rr - (ns) 120 I F = 8 .0 A I F = 4 .0A I IR R M - (A ) I F = 1 6A I F = 8.0A 10 80 I F = 4 .0 A 40 0 100 d i f /d t - (A / s) 1000 1 100 1000 di f /dt - (A /s) Fig. 14 - Typical Reverse Recovery vs. dif/dt 600 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 500 I F = 4 .0A 400 d i(re c)M /d t - (A /s) Q R R - (nC ) I F = 16 A I F = 8.0 A 100 300 I F = 1 6A I F = 8 .0A 200 I F = 4 .0A 100 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 10 100 0 100 d i f /d t - (A / s) 1000 1000 di f /dt - (A /s) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4PH40UD 90% Vge Same ty pe device as D .U.T. +Vge Vce 80% of Vce 430F D .U .T. Ic 10% Vce Ic 9 0 % Ic 5 % Ic td (o ff) tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Vce Ic dt t1 + 5 S V c e ic d t t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = Ic dt V cc trr id d t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 E re c = t1 Vd Ic dt t4 V d id d t t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4PH40UD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000 F 100 V Vc* D.U.T. RL= 0 - 800V 800V 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4PH40UD Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10H, RG= 10 (figure 19) S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot. Notes: Case Outline TO-247AC 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 ( .0 1 0 ) -A5 .5 0 (.2 17 ) -D- 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- M DBM 5 .3 0 (.2 0 9 ) 4 .7 0 (.1 8 5 ) 2.5 0 ( .0 8 9) 1.5 0 ( .0 5 9) 4 NOTE S: 1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14 .5M , 1 98 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL LIM E T E R S (IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 4 7A C . 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 2 3 2X 5.5 0 (.2 1 7) 4.5 0 (.1 7 7) -C- LEAD 1234- A S S IG N M E N T S GAT E COLLECTO R E M IT T E R COLLECTO R * 1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 ) 4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) 0 .8 0 (.0 3 1 ) 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 ) * 3X C AS 2 .4 0 (.0 9 4 ) 2 .0 0 (.0 7 9 ) 2X 5 .4 5 (.2 1 5 ) 2X LO N G E R LE A D E D (2 0m m ) V E R S IO N A V A IL A B L E (T O -2 47 A D ) T O O R D E R A D D "-E " S U F F IX TO PAR T NUM BER 3X 1 .4 0 ( .0 56 ) 1 .0 0 ( .0 39 ) 0.2 5 (.0 1 0 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) CO NF O RM S TO J EDEC O U TL IN E TO -2 47AC (T O -3P) D im e n s io n s in M illim e te rs a n d (In c h e s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 7/00 10 www.irf.com |
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